The synthesis and the characterisation of silicon nanowires (SiNWs) have recently attracted great attention due to their potential applications in electronics and photonics. As yet, there are no practical uses of nanowires, except for research purposes, but certain properties and characteristics of nanowires look very promising for the future. Graphical abstractSemiconductor nanowires are attracting more and more interest for their applications in nanoscience and nanotechnology. The characteristic of the nanowires is their geometry with a diameter in the range of a few nanometers and a length far greater than their diameter. The structural defects often lead to mechanical defects. By reducing the number of defects per unit length, decreasing the lateral dimensions, crystalline nanowires are expected to be more resistant than the solid. Recently nanowires are attracting intense interest for solar energy conversion. In this review, we summarize the different methods of nanowires production and their applications. Special focus will be kept on silicon nanowires.

A study on charge transport properties of thin film Fe-doped SrTiO epitaxially grown on Nb-doped SrTiO is reported. Electric measurements between 350 °C and 750 °C show a transition from predominant ionic to electronic conduction and lower conductivity of the thin films compared to the bulk of polycrystalline samples. Defect chemical changes at elevated temperature were investigated by applying a bias voltage. A model is described which successfully predicts additional features such as inductive loops or extra semicircles measureable by impedance spectroscopy as well as the complicated time dependence of electric DC-measurements. With this model it is also possible to calculate the negligibly small ionic conductivity next to the dominating electronic conductivity in the high temperature regime. The ionic conductivity is referenced by oxygen isotope depth profiling. Changes of resistive states in Fe-doped SrTiO thin films at high temperature and moderate fields are compared to room temperature resistive switching phenomena at high electric fields. A conductive filament based switching process is observed at room temperature, and the capability for forming such filaments and their electric properties is further analysed using microelectrodes.